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شبیه سازی سلول خورشیدی با استفاده از نرم افزار AFORS

شامل نرم افزار و چند شبیه سازی و فایل منووال نرم افزار

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AFORS-HET: numerical simulation of Solar Cells and Measurements

AFORS-HET features:

  • Modelling of an arbitrary 1D sequence of semiconducting layers and interfaces
  • Equilibrium EQ, steady-state DC, small sinusoidal pertubation AC and general transient TR calculation mode
  • Arbitrary parameter variations and parameter fitting
  • Simulation of internal cell parameters:
    band diagram, local cell currents, recombination, phase shifts, ...
  • Simulation of various measurement techniques:
    • DC measurements
      current-voltage I-V
      quantum efficiency QE
      photo and electro luminescence PEL
      quasi steady state surface photovoltage SPV
      quasi steady state photoconductance QSS-PC
      Goodman measurement
    • AC measurements
      impedance IMP
      capacitance voltage C-V
      capacitance temperature C-T
    • TR measurements
      transient surface photovoltage decay, TR-SPV
      transient photo electro luminescence, TR-PEL
      transient photoconductance decay, TR-PC
    • I-V 2D network simulation
    • calculation of I-V curves according to 1-diode model (new in v2.4.1)
  • Optical modelling:
    • Lambert-Beer Absorption with multiple passes through the layer stack (new in v2.4.1)
    • coherent or incoherent multiple reflection
  • Interface modelling:
    • no interface / drift diffusion interface
    • thermionic emission interface
    • intra-band and Schottky barrier tunneling through spikes in the conduction and valence bands at interfaces (new in v2.5)
  • Boundary modelling
    • Schottky / Schottky-Bardeen metal/semicoductor contact
    • metal/insulator/semiconductor contact
    • ideal electron- / hole-contact (new in v2.4.1)
    • insulator boundary (new in v2.4.1)
  • Layer modelling
    • recombination
      • Shockey-Read-Hall recombination
      • Auger recombination: constant coefficients; according to PC1D; according to Altermatt; according to Kerr/Cuevas (new in v2.4.1); according to Richter et al. (new in v2.5)
      • band-to-band recombination
    • super bandgap generation, sub bandgap generation
    • layer of crystalline Silicon (dependance on doping and temperature)
    • functional dependance of the electrical layer properties (linear, gaussian, error function, exponential) (new in v2.4.1)
    • additional charge transport path through trap-assisted tunneling in high electric field regions of bulk materials (Hurkx model) (new in v2.5)

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کد امنیتی : ریست تصویر
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